Entity — Two-Dimensional Electron Gas (2DEG)

A high-mobility two-dimensional electron layer in the GaN HEMT conduction channel, located at the heterojunction (AlGaN/GaN).

Relation to Modeling

The GaN HEMT’s C_ds includes the 2DEG field-plate depletion capacitance C_2DEG: channel charge beneath the field plate varies with V_DS, contributing the non-linear portion of C_ds in the low-voltage region. This is the fundamental difference from Si MOSFET (where C_ds is dominated by the PN junction).

Related

• gan-hemt — host device
• non-linear-capacitance-extraction